Growth Mechanism And Characterisation Of Chemically Grown Sb Doped Bi_2se_3 Thin Films

摘要

The synthesis of combinatorial Bi_(2-x)Sb_xSe_3 thin films by arrested precipitation technique (APT) using triethanolamine-bismuth, triethanolamine-antimony and sodium selenosulphite as sources of Bi~(3+), Sb~(3+) and Se~(2-), respectively is investigated on commercial glass substrates. The growth mechanism of film formation, composition and surface morphology of the as deposited films were studied as a function of preparative parameters and bath composition. The films were monophasic, polycrystalline and covered the surface of the substrate completely. Energy dispersive X-ray analysis gave coherent elemental composition indicating single phase BiSbSe_3 was made. The good results obtained for Bi_(2-x)Sb_xSe_3 thin films revealed that arrested precipitation technique is best suited for the deposition of large area thin films on conductingonconducting substrates to produce materials for device applications.