Nanostructure Of Thin Silicon Films By Combining Hrtem, xrd And Raman Spectroscopy Measurements And The implication To The Optical Properties

摘要

A series of thin silicon films with different degrees of crystallinity were prepared by decomposition of silane gas highly diluted with hydrogen, in radiofrequency glow discharge. The crystallite size, shape, and the portion of crystalline phase were investigated by high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), Raman spectroscopy (RS), and X-ray powder diffraction (XRD). The absorption coefficient (α) was calculated from the measurement of UV-vis-transmittance. By using RS, the volume fractions of the crystalline phase were estimated from the ratio of the integrated intensities of transversal optical (TO)-related crystalline and amorphous bands. These results were in excellent agreement with the mean crystallite sizes measured in HRTEM images and crystallite sizes refined from XRD measurements. The red shift of absorption, appearing as a result of the increase of the crystal fraction, depends on the size and distribution of nanocrystals.