机译:用不同靶材溅射制备的非晶硅薄膜的结构,光学和电学性质
Department of Electronic Engineering, East China Normal University, Shanghai 200062, PR China,Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062, PR China;
Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062, PR China;
Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062, PR China;
Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062, PR China;
amorphous silicon; sputtering; optical band gap; mobility; solar cell;
机译:离子束溅射沉积技术制备非晶碳薄膜的结构,光学和电学性质的相关性研究
机译:射频功率对射频磁控溅射非晶InGaZnO薄膜结构,光学和电学性质的影响
机译:使用不同密度陶瓷靶材通过RF溅射制备的铟锡氧化物薄膜的结构,电学和光学性质
机译:目标材料对射频磁控溅射沉积未氢化非晶硅薄膜结构和电性能的影响
机译:化学气相沉积和等离子体加氢制备非晶硅的光电性能。
机译:射频磁控溅射制备(MgAl)共掺杂ZnO薄膜的光电性能研究与研究
机译:溅射氢化物的结构和光学性质研究 非晶硅薄膜