Transparent conductive thin film and method of manufacturing the same amorphous, as well as, sputtering target and method of manufacturing the same in order to obtain a transparent conductive thin film of amorphous

摘要

There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing InSUB2/SUBOSUB3 /SUBpowder, WOSUB3 /SUBpowder, and ZnO powder with an average grain size of less than 1 mum so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 mum; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cmSUP2/SUP, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 mSUP3 /SUPfurnace volume.