机译:氧等离子体处理的GaN肖特基势垒二极管的漏电流和亚带隙光响应
Nanjing National Laboratory of Microstruct Nanjing University, Nanjing210093, China;
Nanjing National Laboratory of Microstruct Nanjing University, Nanjing210093, China National Key Laboratory of Monolithic Circuits and Modules, Nanjing Electron Devices Institute, Nanjing 210016. China;
Nanjing National Laboratory of Microstruct Nanjing University, Nanjing210093, China;
Nanjing National Laboratory of Microstruct Nanjing University, Nanjing210093, China;
Nanjing National Laboratory of Microstruct Nanjing University, Nanjing210093, China;
Nanjing National Laboratory of Microstruct Nanjing University, Nanjing210093, China;
Nanjing National Laboratory of Microstruct Nanjing University, Nanjing210093, China;
GaN,Schottky barrier diode,Oxygen plasma treatment,Leakage current;
机译:通过氧处理的GaN帽层降低Ni-AlGaN / GaN肖特基二极管的屏障降低和漏电流降低
机译:氟等离子体处理的AlGaN / GaN肖特基势垒二极管的反向漏电流分析
机译:氟等离子体处理的AIGaN / GaN肖特基势垒二极管的反向漏电流分析
机译:低漏电流圆形AlGaN / GaN肖特基势垒二极管
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
机译:低泄漏和高前进电流密度准垂直GaN肖特基势垒二极管,后髓质