Annealing effects on properties of Ag-N dual-doped ZnO films

摘要

Ag-N dual-doped p-type ZnO (ZnO:(Ag,N)) thin films have been prepared using the sol-gel method. The modifications of the structural, electrical and optical properties of ZnO:(Ag,N) films after annealing in various atmosphere in the temperature range of 300-600 ℃ are discussed. Results show the oxygen-rich environment is benefit to the p-type samples. Transition from n-type to p-type conduction occurred at the annealing temperature of 400 ℃. The optimum annealing temperature is about 500 ℃.