The impact of substrate properties and thermal annealing on tantalum nitride thin films

摘要

In this study film properties of sputter-deposited tantalum nitride (TaN_x) thin layers are investigated focusing on the impact of substrate properties, varying nitrogen content for film synthetization as well as post-deposition annealings in the temperature range up to 500 ℃ For comparison, these investigations are done on low temperature co-fired ceramics and on silicon based substrates whereas the latter approach ensures defined and well-known surface properties. Furthermore, results on the phase evolution with high temperature annealings are presented showing a transformation of Ta_4N to Ta_2N in the temperature range between 350℃ and 500℃. With increasing nitrogen content (i.e. nitrogen flow during film deposition) in the TaN_x layers the topography shows first an increase in surface roughness, next a range where a smoothing of the surface characteristics is observed, and finally buckling and the existence of grain agglomerates. All these analyses are further evaluated with electrical measurements on the film resistivity and on the oxidation behaviour to gain deeper insight into material parameters relevant for micromachined devices which are operated under harsh environmental conditions.