机译:带有电泳沉积(EPD)表面处理的栅极结构的基于GaAs的异质结构场效应晶体管的特性增强
Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan;
Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan;
Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan;
Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan;
Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan;
Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan;
Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan;
Temperature-dependent I-V characteristics; Heterostructure field-effect transistor (HFET); Electrophoretic deposition (EPD); Reverse micelle;
机译:通过电泳沉积(EPD)栅极方法制备的Pt / AlGaN / GaN异质结构场效应晶体管(HFET)
机译:基于伪形AlGaAs-InGaAs-GaAs异质结构的栅区参数对微波场效应晶体管静态特性的影响研究
机译:高性能GaAs基金属氧化物半导体异质结构场效应晶体管,原子层沉积Al_2O_3栅氧化物并通过有机金属化学气相沉积原位钝化AlN
机译:高性能n {sup} + - gaas / p {sup} + - 在{sub} 0.49ga {sub} 0.51p / n-gaas高屏障栅极异质结构场效应晶体管
机译:绝缘亚微米栅极III-N异质结构场效应晶体管的射频特性。
机译:自对准栅AlGaN / GaN异质结构场效应晶体管的氮化钛的合成
机译:Inalas / InGaas异质结构场效应晶体管中的台面 - 侧壁漏电