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Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

机译:高温短时退火对电子束蒸发沉积SnS薄膜的影响

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Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity. (C) 2017 Elsevier B.V. All rights reserved.
机译:在室温下使用电子束蒸发将SnS薄膜沉积在Mo衬底上。将刚沉积的SnS薄膜在860 K的恒定高温下分别进行1分钟,3分钟和5分钟的短时间退火。使用合适的表征工具研究了热处理时间对SnS薄膜物理性能的影响。 XRD分析表明,该膜沿(111)面高度取向,具有正交晶体结构。沉积的SnS薄膜的表面形貌显示出相同的叶片质地,其中退火薄膜显示出大的正交晶状平板状晶粒,而不是叶片状晶粒,这表明在高温下进行短时间退火的重要性。透射电子显微镜证实那些大的正交晶平板具有单晶性质。结果强调,高温下的短时间退火处理刺激了膜向单结晶性的生长。 (C)2017 Elsevier B.V.保留所有权利。

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