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Investigation of CuInSe2 nanowire arrays with core-shell structure electrodeposited at various duty cycles into anodic alumina templates

机译:具有不同占空比电沉积到阳极氧化铝模板中的核-壳结构的CuInSe2纳米线阵列的研究

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摘要

Copper indium selenide (CuInSe2) nanowire (NW) arrays were prepared at various electrolyte duty cycles by filling anodic alumina templates through the pulsed electrodeposition technique. X-ray diffraction and scanning electron microscopy (SEM) images showed that the nucleation mechanism of CuInSe2 NW arrays was affected by the electrodeposition duty cycle. Moreover, SEM images showed that the diameter and length of the NWs were 80 nm and 2 mu m, respectively. Furthermore, PEDOT/CuInSe2 NW core-shell arrays were fabricated using surfactant-modified CuInSe2 NW surfaces showing the lotus effect. Transmission electron microscopy images confirmed that a core-shell structure was achieved. Current-voltage plots revealed that the CuInSe2 NW arrays were p-type semiconductors; moreover, the core-shell structure improved the diode ideality factor from 3.91 to 2.63. (C) 2016 Elsevier B.V. All rights reserved.
机译:通过使用脉冲电沉积技术填充阳极氧化铝模板,在各种电解质占空比下制备硒化铜铟(CuInSe2)纳米线(NW)阵列。 X射线衍射和扫描电子显微镜(SEM)图像显示,CuInSe2 NW阵列的成核机理受电沉积占空比的影响。此外,SEM图像显示NW的直径和长度分别为80nm和2μm。此外,PEDOT / CuInSe2 NW核-壳阵列是使用表面活性剂修饰的CuInSe2 NW表面制成的,显示出荷叶效应。透射电子显微镜图像证实获得了核-壳结构。电流-电压图显示,CuInSe2 NW阵列是p型半导体;此外,核-壳结构将二极管理想因数从3.91提高到2.63。 (C)2016 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2017年第1期|631-636|共6页
  • 作者单位

    Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan;

    Cheng Shiu Univ, Dept Elect Engn, 840 Chengcing Rd, Kaohsiung 833, Taiwan;

    Cheng Shiu Univ, Dept Elect Engn, 840 Chengcing Rd, Kaohsiung 833, Taiwan;

    Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan;

    Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Nanowire; CuInSe2; Nucleation mechanism; Core-shell;

    机译:纳米线;CuInSe2;成核机理;核壳;

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