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SNS-DC-SQUIDs and flux transformers for integrated magnetometers in flip-chip technique

机译:倒装芯片技术中用于集成磁力计的SNS-DC-SQUID和磁通互感器

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YBa2Cu3O7-δ/Ag/YBa2Cu3O7-δ Josephson-junctions across steps in MgO substrates were used to fabricate SNS-DC-SQUIDs in the step-and-gap geometry. The necessary break of the YBa2Cu3O7-δ-film at the step was confirmed by transmission electron microscopy investigations. The removal of the Ag-layer eliminates the shunt resistance on top of the HTSC which increases the normal resistance RN by more than two orders of magnitude with only a slight reduction in IC. The junctions can be described by the SINS-formalism, which allows high ICRN-products with large values of the normal resistances RN. For thin-film flux transformer epitaxial YBa2Cu3O7-δ/SrTiO3/YBa2Cu3O7-δ trilayers were grown using a co-sputter process. Test coils exhibited a current density in excess of 8×105 A/cm2 and insulation resistivities of 108 Ωcm at 77 K. By coupling the flux transformers to SQUIDs using a flip-chip technology the magnetic field response were increased by a factor of 9.
机译:YBa2Cu3O7-δ/ Ag /YBa2Cu3O7-δ在MgO衬底上跨步的约瑟夫森结被用来制造阶梯和间隙几何形状的SNS-DC-SQUID。通过透射电子显微镜研究证实了该步骤中YBa 2 Cu 3 O 7-δ膜的必要断裂。 Ag层的去除消除了HTSC顶部的分流电阻,这将正常电阻RN增加了两个数量级以上,而IC仅略有减小。结点可以通过SINS形式主义来描述,该形式主义允许具有大值正常电阻RN的高ICRN乘积。对于薄膜磁通互感器,外延YBa2Cu3O7-δ/ SrTiO3 /YBa2Cu3O7-δ使用共溅射工艺生长了三层膜。测试线圈在77 K时的电流密度超过8×105 A / cm2,绝缘电阻为108Ωcm。通过使用倒装芯片技术将磁通互感器与SQUID耦合,磁场响应提高了9倍。

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