Fast temperature ramping Hg-vapor annealing process for fabricationof Hg-based superconducting thin films

摘要

Growth mechanism of superconducting Hg-based cuprate thin films has been studied by changing the sample heating rate in Hg-vapor annealing process. A fast temperature ramping Hg-vapor annealing (FTRA) process has been found to be beneficial to the growth of high quality c-axis oriented epitaxial HgBa2CaCu2O6+δ films with zero-resistance Tc up to 124 K and HgBa2Ca2 Cu3 O8+δ films with zero-resistance T c up to 130 K on SrTiO3 and LaAlO3 substrates. The high Jc's carried by these films makes them promising for many applications