Growth mechanism of superconducting Hg-based cuprate thin films has been studied by changing the sample heating rate in Hg-vapor annealing process. A fast temperature ramping Hg-vapor annealing (FTRA) process has been found to be beneficial to the growth of high quality c-axis oriented epitaxial HgBa/sub 2/CaCu/sub 2/O/sub 6+/spl delta// films with zero-resistance T/sub c/ up to 124 K and HgBa/sub 2/Ca/sub 2/Cu/sub 3/ O/sub 8+/spl delta// films with zero-resistance T/sub c/ up to 130 K on SrTiO/sub 3/ and LaAlO/sub 3/ substrates. The high J/sub c/'s carried by these films makes them promising for many applications.
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机译：通过改变汞蒸气退火过程中的样品升温速率，研究了超导汞基铜酸盐薄膜的生长机理。已经发现快速升温的汞蒸气退火（FTRA）工艺有利于高质量c轴取向外延HgBa / sub 2 / CaCu / sub 2 / O / sub 6 + / spl delta //薄膜的生长零电阻T / sub c /可达124 K和HgBa / sub 2 / Ca / sub 2 / Cu / sub 3 / O / sub 8 + / spl delta //膜零电阻T / sub c /可达在SrTiO / sub 3 /和LaAlO / sub 3 /衬底上达到130K。这些薄膜的高J / sub c /使得它们在许多应用中很有前途。
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