首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Circulating power, RF magnetic field, and RF current density of shielded dielectric resonators for power handling analysis of high-temperature superconducting thin films of arbitrary thickness
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Circulating power, RF magnetic field, and RF current density of shielded dielectric resonators for power handling analysis of high-temperature superconducting thin films of arbitrary thickness

机译:屏蔽介电谐振器的循环功率,RF磁场和RF电流密度,用于任意厚度的高温超导薄膜的功率处理分析

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摘要

In the current quest for HTS films with negligible power effects at high RF power levels for wireless communications, accurate calculations of a maximum RF magnetic field H/sub max/ and of a maximum RF current density J/sub max/ flowing on the surface of superconducting films is necessary to allow for any sensible conclusions and comparisons. As the dielectric resonator method is used most frequently for investigation of HTS losses, the authors discuss in this paper a dependence of the circulating power and of a maximum RF magnetic field H/sub max/ on dielectric resonators' geometry as well as of the maximum RF current density J/sub max/ flowing on the surface of superconducting films on the films' thickness, for a general case of a resonator shielded in a metallic cavity. The authors' results demonstrate that under the same input power levels the same HTS films may be exposed to differing RF power level conditions, depending on the cavity to dielectric radius ratio and thickness of superconducting films. This means that there may be a significant discrepancy between calculated and real power handling capabilities of HTS films tested in different dielectric resonators unless correct formulas are used.
机译:在当前对在无线通信中以高RF功率水平具有可忽略不计功率影响的HTS薄膜的追求中,要精确计算出在表面上流过的最大RF磁场H / sub max /和最大RF电流密度J / sub max /。超导膜是必要的,以便做出任何明智的结论和比较。由于介质谐振器方法最常用于研究HTS损耗,因此本文作者讨论了循环功率和最大RF磁场H / sub max /对介质谐振器的几何形状以及最大谐振器几何形状的依赖性。对于在金属腔中屏蔽的谐振器的一般情况,流过超导膜表面的RF电流密度J / sub max /具有膜的厚度。作者的结果表明,在相同的输入功率水平下,相同的HTS膜可能会暴露于不同的RF功率水平条件下,具体取决于腔与介电半径之比和超导膜的厚度。这意味着除非使用正确的公式,否则在不同的介电谐振器中测试的HTS膜的计算功率和实际功率处理能力之间可能存在很大差异。

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