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Ex-situ post-deposition processing for large area Y1Ba2Cu3O7 films and coated tapes

机译:大面积Y1Ba2Cu3O7薄膜和涂层带的异位后沉积处理

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Ex-situ post-deposition reaction processing is considered a promising alternative to in-situ physical vapor deposition techniques for coated Y1Ba2Cu3O7 conductor development. It was reported recently that attempts at ex-situ processing of long Y1Ba2Cu3O7 precursor tapes resulted in an inhomogeneous growth rate over the tape length and rather poor properties for the whole sample. We performed a set of experiments in order to clarify the mechanisms for the ex-situ processing of large area films and estimate properties of long coated conductors manufactured by the ex-situ technique. It was found that rate limiting step of ex-situ growth of Y1Ba2Cu3O7 is removal of the reaction product, hydrofluoric acid, by both gas diffusion and convection in the reaction atmosphere. We report on a quantitative model that well describes the observed growth rates for films with various areas
机译:原位后沉积反应处理被认为是用于涂覆Y1Ba2Cu3O7导体开发的原位物理气相沉积技术的有希望的替代方法。最近有报道说,试图对长的Y1Ba2Cu3O7前体带进行异地处理会导致整个带长度上的生长速率不均匀,并且整个样品的性能也很差。我们进行了一组实验,以阐明大面积薄膜异位处理的机理,并评估通过异位技术制造的长涂层导体的性能。已发现Y1Ba2Cu3O7异位生长的限速步骤是通过气体在反应气氛中的扩散和对流来除去反应产物氢氟酸。我们报告了一个定量模型,该模型很好地描述了不同面积电影的观测增长率

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