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Enhancement of critical current density and flux pinning in Bi-2212 thick films due to MgO addition

机译:由于添加了MgO而提高了Bi-2212厚膜的临界电流密度和通量钉扎

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In order to substitute cheaper sheath materials for Ag, Bi-2212 superconducting thick films grown on oxidized Ni substrates were prepared by using a normal partial melt process. 0-5 vol% of fine MgO particles were doped in Bi-2212 phase during the fabrication for the purpose of enhancement of the critical current density (J/sub c/) in Bi-2212. The samples were analyzed with the assistances of X-ray diffractometer (XRD) and electron probe microanalyzer (EPMA). The critical temperature and J/sub c/ were measured by using the conventional resistive method (4-probe method). An apparent improvement in J/sub c/ characteristic was observed in the samples with fine MgO particles doped. The J/sub c/ value in the 5 vol% MgO doped sample reached to the level comparable with that in other Ag-sheathed samples. Furthermore, the irreversibility field was confirmed to be largely enhanced by the addition of MgO particles. The pin parameters derived from the scaling behavior of pinning force density turned out to be similar to those predicted in the case of normal precipitate flux pinning, indicating that MgO particles in Bi-2212 act as effective pinning centers.
机译:为了用便宜的皮套材料代替银,通过使用常规的部分熔融工艺制备了在氧化的镍衬底上生长的Bi-2212超导厚膜。为了在Bi-2212中提高临界电流密度(J / sub c /),在制造期间在Bi-2212相中掺杂了0​​-5vol%的MgO细颗粒。借助X射线衍射仪(XRD)和电子探针微分析仪(EPMA)对样品进行分析。临界温度和J / sub c /通过使用常规电阻法(4-探针法)测量。在掺有细MgO颗粒的样品中观察到J / sub c /特性的明显改善。掺有5%(体积)MgO的样品的J / sub c /值达到了与其他装有Ag的样品相比的水平。此外,通过添加MgO颗粒,证实了不可逆场大大增强了。由钉扎力密度的缩放行为得出的钉扎参数与正常的析出通量钉扎的情况下预测的参数相似,表明Bi-2212中的MgO颗粒充当有效钉扎中心。

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