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Design and Development of SIS Mixers for ALMA Band 10

机译:用于ALMA Band 10的SIS混合器的设计与开发

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We present the design and preliminary experimental results of Superconductor-Insulator-Superconductor (SIS) mixers for Atacama Large Millimeter Array (ALMA) band 10 (780–950 GHz) receivers. To achieve wide frequency coverage as well as low noise temperature, we integrated high current density (10 ${rm kA/cm}^{2}$) and small-sized (one micrometer in diameter) ${rm Nb/AlO}_{rm x}/{rm Nb}$ SIS junctions with a tuning microstrip line using NbTiN ground plane and Al wiring layers. High quality NbTiN films with Tc reaching 14.5 K and Al films with residual resistivity ratio as large as 15 have been achieved. To minimize the waveguide transmission loss and facilitate the fabrication of mixer block, a full height waveguide was adopted. The waveguide probe was optimized to achieve low input impedance in the frequency range of 780–950 GHz while adopting a backshort cavity of zero depth. Preliminary RF testing with a Nb/Al microstrip tuning circuit demonstrated a DSB receiver noise temperature about 400 K at 832.5 GHz, which promises the accommodation of receiver performance in ALMA specification with low loss NbTiN/Al microstrip lines.
机译:我们介绍了用于Atacama大毫米波阵列(ALMA)10(780-950 GHz)接收器的超导体-绝缘体-超导体(SIS)混频器的设计和初步实验结果。为了实现宽频率覆盖范围和低噪声温度,我们集成了高电流密度(10 $ {rm kA / cm} ^ {2} $)和小尺寸(直径为1微米)$ {rm Nb / AlO} _ {rm x} / {rm Nb} $ SIS结,使用NbTiN接地层和Al布线层调节微带线。已经获得了Tc达到14.5 K的高质量NbTiN膜和残余电阻率高达15的Al膜。为了最小化波导传输损耗并方便制造混频器模块,采用了全高度波导。波导探头经过优化,可在780–950 GHz的频率范围内实现低输入阻抗,同时采用零深度的反向短路腔。使用Nb / Al微带调谐电路进行的初步RF测试表明,在832.5 GHz处,DSB接收机的噪声温度约为400 K,这有望在低损耗NbTiN / Al微带线路的ALMA规范中适应接收机的性能。

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