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Growth of Biaxially Oriented Conductive ITO Buffer Layers on Textured Ni Tapes for YBCO Coated Conductors

机译:YBCO涂层导体的织构镍带上双轴取向导电ITO缓冲层的生长

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We investigated the effect of the ${rm Ar}^{+}$ ion beam irradiation on removing NiO on the ${100}langle 001rangle$ textured Ni tape surface, and the validity of the ITO as a conductive buffer layer. Excellent biaxial crystal orientations of the ${rm CeO}_{2}$, YSZ and YBCO were achieved in the ${rm YBCO/YSZ/CeO}_{2}$ prepared on the ${100}langle 001rangle$ textured Ni tape, by irradiating the surface of the Ni tape before starting the deposition. The $J_{rm c}$ of the ${rm YBCO/YSZ/CeO}_{2}/{rm Ni}$ tape exceeded 2 ${rm MA/cm}^{2}$ at 77 K.
机译:我们研究了$ {rm Ar} ^ {+} $离子束辐照对去除$ {100} langle 001rangle $纹理化的Ni带表面上的NiO的影响,以及ITO作为导电缓冲层的有效性。 $ {rm CeO} _ {2} $,YSZ和YBCO的出色的双轴晶体取向是在$ {100}矩形001rangle $织构的Ni上制备的$ {rm YBCO / YSZ / CeO} _ {2} $中实现的在开始沉积之前,通过辐照镍带的表面来形成带。 $ {rm YBCO / YSZ / CeO} _ {2} / {rm Ni} $磁带中的$ J_ {rm c} $在77 K处超过2 $ {rm MA / cm} ^ {2} $。

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