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Measurements of Microwave Vortex Response in DC Magnetic Fields in Tl$_2$Ba$_2$CaCu

机译:Tl $ _ 2 $ Ba <的直流磁场中微波涡旋响应的测量tex-math notation = “ LaTeX ”> $ _ 2 $ CaCu

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There is a renewed interest in superconductors for high-frequency applications, leading to a reconsideration of already known low-T-c and high-T-c materials. In this view, we present an experimental investigation of the millimeter-wave response in moderate magnetic fields of Tl2Ba2CaCu2O8+x super-conducting films with the aim of identifying the mechanisms of the vortex-motion-induced response. We measure the dc magnetic-field-dependent change of the surface impedance, Delta Z(s )(H) = Delta R-s (H) + i Delta X-s (H) at 48 GHz by means of the dielectric resonator method. We find that the overall response is made up of several contributions, with different weights depending on the temperature and field: a possible contribution from Josephson or Abrikosov-Josephson fluxons at low fields; a seemingly conventional vortex dynamics at higher fields; a significant pair breaking in the temperature region close to T-c. We extract the vortex motion depinning frequency f(p), which attains surprisingly high values. However, by exploiting the generalized model for relaxational dynamics we show that this result comes from a combination of a pinning constant k(p) arising from moderate pinning, and a vortex viscosity eta with anomalously small values. This latter fact, implying large dissipation, is likely a result from a peculiar microscopic structure and thus poses severe limits to the application of Tl(2)Ba(2)CaCu(2)O(8+x )in a magnetic field.
机译:对用于高频应用的超导体有了新的兴趣,这导致了对已知的低T-c和高T-c材料的重新考虑。在这种观点下,我们提出了对Tl2Ba2CaCu2O8 + x超导薄膜的中等磁场中毫米波响应的实验研究,目的是确定涡旋运动感应响应的机制。我们通过介电共振器方法测量了表面阻抗的直流磁场依赖性变化,ΔZ(s)(H)= Delta R-s(H)+ i Delta X-s(H)在48 GHz下。我们发现总体响应由几种贡献组成,根据温度和场的不同,权重也不同:约瑟夫森或阿布里科索夫-约瑟夫森磁通在低场时的可能贡献;在较高磁场下看似常规的涡旋动力学;在接近T-c的温度范围内有大量的配对断裂。我们提取了达到惊人高值的涡旋运动固定频率f(p)。但是,通过利用松弛动力学的通用模型,我们表明此结果来自中等钉扎产生的钉扎常数k(p)和异常值较小的涡旋粘度eta的组合。后者的事实暗示着大的耗散,可能是由于特殊的微观结构造成的,因此对Tl(2)Ba(2)CaCu(2)O(8 + x)在磁场中的应用提出了严格的限制。

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