The Thermoelectric Effect in a Graded-Gap nSi-pSi_(1-x)Ge_x Heterostructure

摘要

The thermoelectric effect, i.e., generation of current and voltage under uniform heating, is for the first time observed in a graded-gap Si_(1-x)Ge_x (0 ≤ x ≤ 1) continuous solid solution and an n-Si-p-Si_(1-x)Ge_x heterostructure made on its basis. Currents of 0.0025-0.0035 μA and voltages of 0.05-0.3 mV have occurred in the temperature range of 40-250℃.