Fabricating high-aspect-ratio sub-diffraction-limit structures on silicon with two-photon photopolymerization and reactive ion etching

摘要

We fabricated sub-micrometer objects with feature sizes about one third of the exposure wavelength using two-photon photopolymerization in an epoxy-based photoresist SU-8. Owing to the high mechanical strength of this photoresist, an aspect ratio as high as nine was achieved with a 200-300 nm lateral dimension. A simple equation was used to estimate the feature size from the laser parameters such as spot size, exposure time, pulse width, pulse repetition rate, and the material properties including the two-photon absorption coefficient and the exposure threshold dose. Patterns in SU-8 were transferred onto silicon using reactive ion etching, preserving both the feature size and aspect ratio. Vertical sidewalls of the transferred patterns were achieved using the black silicon method.