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Method for passivating the surface of semiconductor silicon circuits and discrete components involves locally exposing surface of silicon and producing primary needle-like silicon structures by reactive ion etching
Method for passivating the surface of semiconductor silicon circuits and discrete components involves locally exposing surface of silicon and producing primary needle-like silicon structures by reactive ion etching
The method involves locally exposing the surface of the silicon and then producing primary needle-like silicon structures with nano dimensions by means of a reactive ion etching process. This structured silicon surface is then transformed by thermal oxidation completely into secondary similarly needle-like silicon dioxide structures.
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