Submicrometer-mos Capacitor With Ultra High Capacitance Biased By Au Nanoelectrodes

摘要

The ultimate limits of size of the current metal-oxide-semiconductor capacitors can be overcome by preparation of three-dimensional devices that can vertically be biased using one-dimensional metal nanostructures. Here, we present a general and efficient approach to the assembly and integration of Au nanocrystals into functional nanoelectrodes of three-dimensional submicrometer-MOS (0.35 μm~2) capacitors, presenting an ultra high capacitance (24 ± 1 pF). The Au nanocrystals were directly produced into a nanoporous template of anodized aluminum oxide that was evaluated, and the electrical characterization of this device corroborates the formation of the MOS capacitor. Flat band voltage is independent of sweep voltage range, and negligible hysteresis of capacitance-voltage curves is observed when sweep voltage ranges from positive to negative and turned again to positive bias. In addition, experimental results match theoretical analysis and indicate the presence of free surface charges stored in the Au nanostructures. The demonstrated ability to control the assembling of the nanocrystals and the results of electrical characterization indicate that the embedded Au nanoelectrodes have a high potential for memory applications based on three-dimensionalrndevices.