机译:完全兼容CMOS的氧化钨ReRAM的开关机理和电极材料的研究
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC,Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Department of Physics and Institute of Applied Science and Engineering, Fu Jen University, Taipei, Taiwan, ROC;
National Nano Device Laboratories, Hsinchu, Taiwan, ROC;
National Nano Device Laboratories, Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
Emerging Central Lab., Macronix International Co., Ltd., Hsinchu, Taiwan, ROC;
机译:完全兼容CMOS的氧化钨ReRAM的开关机理和电极材料的研究
机译:氧化物和电极材料对氧化物RerAM装置的开关特性的影响
机译:基于氧化物的存储设备中CMOS兼容电极材料的选择
机译:65nm CMOS的切换变异性对基于二氧化铪的RERAM器件的影响变化对不同水平操作的影响
机译:CMOS兼容的薄膜ALD钨纳米机电器件。
机译:电阻开关器件中金属氧化物的薄膜沉积:锰矿薄膜中电阻开关的电极材料依赖性
机译:高性能CmOs兼容钙钛矿氧化物忆阻器:成分控制和纳米级开关特性