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Microwave plasma CVD-grown graphene-CNT hybrids for enhanced electron field emission applications

机译:微波等离子体CVD生长的石墨烯-CNT杂化物,用于增强电子场发射应用

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The growth and electron emission characteristics were investigated from a hybrid structure of multi-walled carbon nanotubes (MWCNTs) and multilayer layer graphene (MLG) deposited on silicon substrate coated with iron catalyst and an interlayer of aluminium. The hybrid structures were synthesized in a two-step process by microwave plasma-enhanced chemical vapour deposition technique. The formation of MWCNTs takes place by absorption and precipitation of carbon radicals into the catalyst particles. Thereafter, ample carbon forms MLG on tip of the MWCNTs resulting in a MLG-MWCNTs hybrid nanostructure. MLG was observed to grow branching out of the tips and sidewalls of the MWCNTs and is expected to attach by Van der Walls bonds. Transmission electron microscopy and micro-Raman spectroscopy confirmed the crystalline nature of the hybrid structures. Electron emission studies were carried out using a diode-type field emission setup. The enhancement factor was found to be ~3,500 for bare MWCNTs, ~4,070 to ~ 5,000 for hybrid structures and ~ 6,500 for N-doped MLG-MWCNTs hybrid structures. Modification in the defects structure and enhancement of emission sites are suggested to be responsible for the increase of the field emission characteristics.
机译:通过沉积在涂有铁催化剂和铝中间层的硅基底上的多壁碳纳米管(MWCNT)和多层石墨烯(MLG)的混合结构,研究了其生长和电子发射特性。通过微波等离子体增强化学气相沉积技术以两步法合成了杂化结构。 MWCNT的形成是通过碳自由基吸收并沉淀到催化剂颗粒中而发生的。此后,充足的碳在MWCNT的尖端形成MLG,从而形成MLG-MWCNTs杂化纳米结构。观察到MLG会从MWCNT的尖端和侧壁上生长出分支,并有望通过范德华勒斯壁键连接。透射电子显微镜和显微拉曼光谱证实了杂化结构的晶体性质。电子发射研究是使用二极管型场发射装置进行的。发现增强因子对于裸MWCNT为〜3,500,对于杂化结构为〜4,070至〜5,000,对于N掺杂MLG-MWCNT杂化结构为〜6,500。缺陷结构的修改和发射点的增加被认为是导致场发射特性增加的原因。

著录项

  • 来源
    《Applied Physics 》 |2014年第4期| 2197-2205| 共9页
  • 作者单位

    Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India;

    Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India;

    Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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