High-mobility transparent thin-film transistors with ZnSnLiO channel layer prepared by radio frequency magnetron sputtering

摘要

We have fabricated transparent thin-film transistors with ZnSnLiO as active layers deposited by radio frequency magnetron sputtering at room temperature. The TFTs structure used in this study was a staggered bottom-gate, which consists of SiO_2 as a gate insulator and heavily doped p-type Si(1 1 1) as a gate electrode. In order to optimize the performance of the ZnSnLiO thin-film transistors, the thermal annealing is investigated. We find that appropriate annealing temperature is very beneficial for the ZnSnLiO TFTs, and when the annealing temperature is 500 ℃, the transistor exhibited the high field-effect mobility of 45.1 cm~2/V s and a large I_(on/off) ratio of 6.0 × 10~7.