Influence of heat treatment on characteristics of In2O3/Ag/MoO3 multilayer films as transparent anode for optoelectronic applications

摘要

In this study, In2O3/Ag/MoO3 (IAM) nano-multilayer films are designed, and optimum thickness of each layer is calculated. These films were deposited by thermal evaporation technique and then annealed in air atmosphere at different temperatures for 1 h. The effects of annealing temperature on electrical, optical, and structural properties of the IAM system were investigated. The UV-visible-near-IR transmittance and reflectance spectra confirmed that the annealing temperature has significant influence on the electroaEurooptical characteristics of IAM films. High-quality IAM films with a low sheet resistance of 8.2 (Omega/a-) and the maximum optical transmittance of 85 % at 120 A degrees C annealing temperature were obtained. The effect of heat treatment on surface roughness of the layers was also investigated. Figure-of-merit quantity showed that the IAM films annealed at 120 A degrees C have the best performance. X-ray diffraction patterns showed that the crystallinity of the structures enhanced with increase in annealing temperature. Organic light-emitting diodes (OLEDs) were fabricated on IAM anodes. The current density-voltage-luminance (J-V-L) characteristic measurements show that the electroluminescence performances of OLED with IAM anode are improved compared with the conventional ITO-based device. The results indicate that the designed system is suitable for use as transparent conductive anode in optoelectronic devices.