Improved characteristics of suspended membrane GaN light-emitting diodes on a silicon platform with reflective mirror

摘要

We propose the suspended membrane GaN light-emitting diodes with reflective mirror on silicon platform by back wafer processing. Silicon substrate under emission region is removed. Suspended membrane is thinned from backside and evaporated a reflective metal mirror. Multiple optical and electrical measurements are taken to characterize the performance of LEDs. Current density of suspended LED with reflective mirror is improved from 383.08 to 641.03 mA/mm(2) compared to common LED. The reflectivity is 2.72 times of common LED in visible range. Emitted light increased by 330 % at 3 mA current in electroluminescent measurements. Light emission improvements are more obvious at larger current.