Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

摘要

Performance degradation due to interfacial traps is generally considered as one of the main challenges for III-V metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this work, we have investigated the suppression of interface state response using band engineering in III-V quantum well MOSFETs and experimentally verified the concept in the antimonide materials system using a gate-stack consisting of Al2O3/GaSb/InAlSb. It is shown that if the thickness of the interfacial layer of GaSb is scaled down to a few monolayers, the effective bandgap of the interfacial layer increases dramatically due to quantum confinement, which leads to the suppression of interface-trap response.