Switchable diode effect in polycrystalline Bi3.15Nd0.85Ti3O12 thin films for resistive memories

摘要

The switchable diode effect is found in the Bi3.15Nd0.85Ti3O12 (BNT) polycrystalline thin films with a residual polarization (2Pr) of 55 μC/cm2 fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. The consistencies of P-V and I-V curves demonstrate that the switchable diode effect is mainly triggered by polarization modulated Schottky-like barriers. The ON/OFF ratio of resistive switching based on these switchable diodes is more than 3 orders during the retention capacity measurement, which indicates that the polycrystalline BNT thin films are promising for the resistive memories applications.