Low-temperature crystallization of high performance Pb0.4Sr0.6TiO3 films compatible with the current silicon-based microelectronic technology

摘要

This investigation presents a simple approach to realize the low temperature crystallization of Pb0.4Sr0.6TiO3 thin films at 400?°C by taking advantage of well controlled lead excess and kinetic-driving-force compensated thermodynamics crystalline via sputtering deposition. The thin films prepared at low temperature show fine-grained micro-structure because of the suppressed grain growth, furthermore, the intrinsic dielectric response can be modulated by the distinct level of crystallinity. The film processed at 450?°C exhibited a dielectric constant of 435 and high figure merit of 130 at 400?kV/cm, superior ferroelectric property, and stable performance with temperature and frequency.