首页> 外文期刊>Applied Physics Letters >Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures
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Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures

机译:压电应变诱导的(011)-La 2/3 Sr 1/3 MnO 3 /0.7Pb(Mg 2/3 Nb 1/3 )O 3 -0.3PbTiO 3 外延异质结构

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摘要

The non-volatile resistance states induced by converse piezoelectric effect are observed in ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (LSMO/PMN0.7PT0.3). Three stable remnant strain states and the corresponding resistance states are achieved by properly reversing the electric field from the depolarized direction in ferroelectric PMN0.7PT0.3 substrate. The non-volatile resistance states of the LSMO film can be manipulated by applied electric-field pulse sequence as a result of the large coupling between the electronic states of LSMO film and the strain transferred from the ferroelectric substrate. The electrically tunable, non-volatile resistance states observed exhibit potential for applications in low-power-consumption electronic devices.
机译:在(011)-La 2/3 Sr 1/3 MnO 的铁磁/铁电外延异质结构中观察到了逆压电效应引起的非易失性电阻状态3 /0.7Pb(Mg 2/3 Nb 1/3 )O 3 -0.3PbTiO 3 (LSMO / PMN 0.7 PT 0.3 )。通过在铁电PMN 0.7 PT 0.3 衬底中从去极化方向正确反转电场,可以实现三个稳定的残余应变状态和相应的电阻状态。由于LSMO膜的电子状态与从铁电基体传递来的应变之间存在较大的耦合,因此可以通过施加电场脉冲序列来控制LSMO膜的非易失性电阻状态。观察到的电可调,非易失性电阻状态显示了在低功耗电子设备中应用的潜力。

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