Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

摘要

Material and optical characterizations have been conducted for epitaxially grown GeSn thin films on Si with Sn composition up to 10%. A direct bandgap GeSn alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample.