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Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

机译：在带2230 nm光致发光的硅上生长的直接带隙GeSn

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摘要

Material and optical characterizations have been conducted for epitaxially grown Ge_(1-x)Sn_x thin films on Si with Sn composition up to 10%. A direct bandgap Ge_(0.9)Sn_(0.1) alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as lone as 2230 nm has also been observed from the same sample.
机译：已经在具有高达10％的Sn组成的Si上外延生长Ge_（1-x）Sn_x薄膜进行了材料和光学表征。通过基于温度的光致发光（PL）研究，已基于单峰光谱和窄线宽确定了直接带隙Ge_（0.9）Sn_（0.1）合金。从同一样品中还观察到室温PL发射高达2230 nm。

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  • 来源
    《Applied Physics Letters》 |2014年第15期|151109.1-151109.5|共5页
  • 作者

    Seyed Amir Ghetmiri; Wei Du; Joe Margetis; Aboozar Mosleh; Larry Cousar; Benjamin R. Conley; Lucas Domulevicz; Amjad Nazzal; Greg Sun; Richard A. Soref; John Tolle; Baohua Li; Hameed A. Naseem; Shui-Qing Yu;

  • 作者单位

    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA;

    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA;

    ASM, 3440 East University Drive, Phoenix, Arizona 85034, USA;

    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA;

    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA;

    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA;

    Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, Pennsylvania 18766,USA;

    Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, Pennsylvania 18766,USA;

    Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, USA;

    Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, USA;

    ASM, 3440 East University Drive, Phoenix, Arizona 85034, USA;

    Arktonics, LLC, 1339 South Pinnacle Drive, Fayetteville, Arkansas 72701, USA;

    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA;

    Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA;

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