机译:由于人工图案化的铁电畴壁数和非易失性记忆特性导致的电流变化
Department of Applied Physics Institute of Natural Sciences and Integrated Education Institute for Frontier Science and Technology Kyung Hee University Yongin 17104 Republic of Korea;
V-memory Corp. Heungdeok IT Valley B605 13 Heungdeok 1-ro Giheung-gu Yongin-si Gyeonggi-do Republic of Korea;
Department of Applied Physics Institute of Natural Sciences and Integrated Education Institute for Frontier Science and Technology Kyung Hee University Yongin 17104 Republic of Korea V-memory Corp. Heungdeok IT Valley B605 13 Heungdeok 1-ro Giheung-gu Yongin-si Gyeonggi-do Republic of Korea;
机译:非易失性铁电畴壁存储器
机译:非易失性铁电畴壁存储器
机译:低电流驱动的垂直域壁运动存储器,具有人工铁磁
机译:铁电畴切换对非易失性电荷陷阱存储器的影响
机译:铁电/电极接口:非易失性存储器中PZT电容器的极化切换和可靠性
机译:非易失性铁电畴壁存储器
机译:非易失性铁电畴壁记忆
机译:用于超高密度Rad-Hard非易失性存储器的纳米图形铁电体