Coherent heteroepitaxy of Bi2Se3 on GaAs „111…B

摘要

We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the u0002111u0003B surface of GaAs bynmolecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharpninterface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer beforengrowing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces overnhundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities fornprobing coherent spin dynamics at the interface between a candidate topological insulator and anlarge class of GaAs-based heterostructures. © 2010 American Institute of Physics.nu0004doi:10.1063/1.3532845