Structural coherency of epitaxial graphene on 3C–SiC„111…

摘要

Graphene has emerged as a promising nanoelectronic material in electronic devices applications andnstudying two-dimensional electron gases with relativistic dispersion near Dirac point. Nonetheless,nthe control of the preparation conditions for homogeneous large-area graphene layers is difficult.nHere, we illustrate evidence for high structural and electronic quality epitaxial graphene on 3C–nSiCu0002111u0003. Morphology and electronic structure of the graphene layers have been analyzed with lownenergy electron microscopy and angle resolved photoemission spectroscopy. Using scanningntunneling microscopy and scanning transmission electron microscopy, we show that graphenenexhibits remarkably continuity of step edges suggesting the possibility of growing large scalengraphene layer. © 2010 American Institute of Physics. u0004doi:10.1063/1.3497287