Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film

摘要

In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes fornSiNx-passivated Hf–In–Zn–O u0002HIZOu0003 thin film transistors by comparing their electrical propertiesnwith devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher fieldneffect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate innenhancement mode. Transmission electron microscopy characterization reveals the formation of annamorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for thendisparate device characteristics in terms of contact resistance and threshold delay. © 2010 AmericannInstitute of Physics. u0004doi:10.1063/1.3505151