Terahertz photoluminescence from GaAs doped with shallow donors

摘要

We report on the observation of efficient generation of terahertz radiation at continuous-waveninterband excitation of n-GaAs at low temperatures. The radiative transitions, accompanyingnrelaxation and trapping of photoexcited electrons to localized donor states or to empty states innimpurity subband, lead to the emission of terahertz photons with a relatively high external quantumnyield up to 0.3%. © 2010 American Institute of Physics. u0004doi:10.1063/1.3441401