Single photon emission from positioned GaAs/AlGaAs photonic nanowires

摘要

Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot u0002QDu0003 onna prepatterned substrate have been grown. The geometry of the nanowires allows for an outcouplingnof the emitted light through the nanowire tip and thereby to probe a single nanowire directly on thengrowth substrate. Single QD linewidths as small as 95 u0002eV and photon antibunching were observednat continuous wave laser excitation with a second order autocorrelation function gu00022u0003nu00020u0003=0.46. Thenresults represent an attractive bottom-up fabrication approach for the realization of high efficiencynphotonic wire based single photon sources. © 2010 American Institute of Physics.nu0004doi:10.1063/1.3440967