Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers

摘要

In this letter, we proposed a metal-oxide-high-k-oxide-silicon-type u0001MOHOSu0002 memory structurenincorporating a high-k Yb2TiO5 charge trapping layer and the subsequent postdeposition annealingntreatment. The effect of postdeposition annealing on the structural properties of Yb2TiO5 chargentrapping layers was explored by x-ray diffraction, transmission electron microscopy, and x-raynphotoelectron spectroscopy. The Yb2TiO5 MOHOS-type device annealed at 800 °C exhibited anlarger memory window of 2.8 V and a smaller charge loss of 10% than did those prepared at othernannealing temperatures. This outcome is attributed to the higher probability for trapping the chargencarrier due to the formation of a well-crystallized Yb2TiO5 structure and a thin low-k interfacialnlayer.