Optically controlled quantum dot gated transistors with high on/off ratio

摘要

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on,nwhere the channel current can be switched off by laser illumination. Laser light at 650 nm with anpower of 850 pW switches the channel current from 5 u0001A to 2 pA, resulting in an on/off ratio ofnmore than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated bandnstructure. © 2010 American Institute of Physics. u0003doi:10.1063/1.3323101