Enhanced tunable and pyroelectric properties of Ba(Ti0.85Sn0.15)O3 thin films with Bi1.5Zn1.0Nb1.5O7 buffer layers

摘要

Bi1.5Zn1.0Nb1.5O7 u0001BZNu0002 buffered Bau0001Ti0.85Sn0.15u0002O3 u0001BTSu0002 heterostructures have been deposited onnLaNiO3 /SiO2 /Si substrates by pulsed laser deposition. The film and interface microstructures,ndielectric and pyroelectric properties of BTS thin films are controlled by the thickness of the BZNnbuffer layer. The BZN layer suppresses interdiffusion between BTS and the bottom electrode,nresulting in a reduction in dielectric loss and leakage current. At 303 K, the dielectric loss, tunabilitynand figure of merit of BZN buffered-BTS films are 0.009, 47.9%, and 68.4, respectively.nFurthermore, a promising pyroelectric coefficient and figure of merit, 24.7u000110−4nC/m2nK andn16.3u000110−5nPa−1/2nare also attained at 293 K. © 2010 American Institute of Physics.