机译:识别Siδ掺杂β-GA_2O_3 MESFET中的临界缓冲陷阱
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA|Indian Inst Technol Dept Elect Engn Mumbai 400076 Maharashtra India;
Indian Inst Technol Dept Elect Engn Mumbai 400076 Maharashtra India;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA|Ohio State Univ Dept Mat Sci & Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA|Ohio State Univ Dept Mat Sci & Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
机译:具有深陷阱的半绝缘衬底上带有p缓冲层的GaAs MESFET的数值分析
机译:具有深陷阱补偿的半绝缘衬底上具有p缓冲层的GaAs MESFET的数值模拟
机译:具有部分重掺杂沟道的改进的双凹P缓冲4H-SiC MESFET
机译:沟道层和缓冲层中非恒定掺杂的4H-SiC MESFET的物理模拟和实验结果的比较
机译:使用缓冲气体加载对过渡金属和稀土原子进行磁捕获。
机译:具有重掺杂区域的新型4H-SiC MESFET轻微掺杂的区域和绝缘区域
机译:通过低频s参数测量和基于TCaD的物理器件仿真识别微波功率alGaN / GaN HEmT中的GaN缓冲阱
机译:mEsFET中使用R-DynamicElement的陷阱和突发掺杂效应建模