机译:150 mm硅晶片上的Epi-Gd_2O_3 / AlGaN / GaN MOS HEMT:适用于高功率应用的全外延系统
Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India;
Aalto Univ, Dept Elect & Nanoengn, POB 13500, FI-00076 Aalto, Finland;
Aalto Univ, Dept Elect & Nanoengn, POB 13500, FI-00076 Aalto, Finland;
Aalto Univ, Dept Elect & Nanoengn, POB 13500, FI-00076 Aalto, Finland;
Aalto Univ, Dept Elect & Nanoengn, POB 13500, FI-00076 Aalto, Finland;
Leibniz Univ Hannover, Inst Elect Mat & Devices, Schneiderberg 32, D-30167 Hannover, Germany;
Leibniz Univ Hannover, Inst Elect Mat & Devices, Schneiderberg 32, D-30167 Hannover, Germany;
机译:ePI-GD_2O_3 / ALGAN / GAN MOS HEMT在150 mm SI晶圆上:高功率应用完全外延系统
机译:用于在蓝宝石衬底上生长的HEMT的100毫米直径AlGaN / GaN外延晶片
机译:用于在蓝宝石衬底上生长的HEMT的100毫米直径AlGaN / GaN外延晶片
机译:常开外延结构上的常关AlGaN / GaN凹陷MOS-HEMT,适用于微波功率应用
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:用多指架构调制对高功率应用的自终止蚀刻技术常关P-GAN / ALGAN / GAN HEMT的研究
机译:Algan / Ingan / GaN和Inaln / Ingan / GaN HEMTS的设计与分析,高功率宽带宽应用
机译:si,GaN和alGaN / GaN高电子迁移率晶体管(HEmT)晶片的非接触迁移率,载流子密度和薄层电阻测量。