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Lowering critical current density for spin-orbit torque induced magnetization switching by ion irradiation

机译:通过离子辐照降低用于自旋轨道转矩感应磁化切换的临界电流密度

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摘要

In ferromagnet/heavy metal heterostructures, critical current density (J(C)) refers to the minimum current density required to generate spin-orbit torque (SOT) for effective magnetization manipulation, including switching of magnetization and moving of domain walls and magnetic skyrmions. This critical current density is a key factor for next-generation SOT-based magnetic random access memory, racetrack memory, and logic devices. In this work, the critical current density for magnetization switching and the thermal stability of Pt/Co/Ta heterostructures in response to ion irradiation are studied. It is found that ion irradiation represents a promising approach for the wide tuning of the magnetic properties, such as the coercive force and the perpendicular magnetic anisotropy constant. It is also found that J(C) is significantly reduced after 500eV Ar+ irradiation. Meanwhile, the ratio between the thermal stability factor E/k(B)T and J(C) increases with an increase in the irradiation dose, although E/k(B)T decreases slightly with the irradiation dose. This work demonstrates that J(C) can be significantly reduced by an appropriate ion irradiation process and thereby demonstrates a promising approach for effective reduction of the power consumption in SOT-based spintronic devices.
机译:在铁磁体/重金属异质结构中,临界电流密度(J(C))指的是产生自旋轨道转矩(SOT)所需的最小电流密度,以进行有效的磁化操作,包括磁化的切换以及畴壁和磁性天体的移动。临界电流密度是下一代基于SOT的磁性随机存取存储器,跑道存储器和逻辑器件的关键因素。在这项工作中,研究了用于磁化切换的临界电流密度和响应离子辐照的Pt / Co / Ta异质结构的热稳定性。已经发现,离子辐照是用于宽调节诸如矫顽力和垂直磁各向异性常数的磁性的有前途的方法。还发现在500eV Ar +照射后,J(C)显着降低。同时,热稳定性因子E / k(B)T和J(C)之间的比率随着辐照剂量的增加而增加,尽管E / k(B)T随着辐照剂量而稍微降低。这项工作表明J(C)可以通过适当的离子辐照工艺显着降低,从而证明了一种有效降低基于SOT的自旋电子器件功耗的有前途的方法。

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  • 来源
    《Applied Physics Letters》 |2019年第3期|032404.1-032404.5|共5页
  • 作者单位

    Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China|Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China;

    Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China|Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China;

    Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China|Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China;

    Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China|Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China;

    Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China|Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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