Laser operation of a heterojunction bipolar light-emitting transistor

摘要

Data are presented demonstrating the laser operation (quasicontinuous, ～200 K) of an InGaP-GaAs-InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the p-type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain β=ΔI_(c)/ΔI_(b) in common emitter operation decreases sharply at laser threshold (6.5→2.5, β>1).