Room temperature continuous wave operation of a heterojunction bipolar transistor laser

摘要

Continuous wave laser operation at 25℃, with simultaneous electrical gain, of an InGaP-GaAs heterojunction bipolar transistor laser, with AlGaAs optical confining layers and an InGaAs recombination quantum well incorporated into the p-type base region, is demonstrated. At laser threshold (I_B=40 mA, V_(CB)=0, 25℃), the transistor current gain β=ΔI_C/ΔI_B in common-emitter operation changes abruptly (2.3→1.2, β > 1), with laser modes developing at wavelength λ ～1006 nm. Direct three-port modulation of the transistor laser at 3 GHz is demonstrated for a device with a 2.2 μm emitter width and a 850 μm length between cleaved Fabry-Perot facets (which is the performance of an exploratory device and not near the limits).