Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

摘要

A tunnel junction for intradevice contacts on GaSb substrates has been realized. By using solid source molecular beam epitaxy, we have fabricated abrupt, heavily doped homo- and heterojunctions of InAs(Sb) and GaSb to form a low resistive ohmic tunnel junction. The resitivity achieved was as low as 2.6x10(-5) Omega cm(2). (C) 2004 American Institute of Physics.