Osmium rectification Schottky and ohmic junctions and tungsten / tungsten carbide / titanium carbide on silicon carbide ohmic contacts

摘要

Metal osmium on SiC (beta or ) forms an effective barrier to the diffusion of contact and conductive metals that are firmly attached to the SiC substrate. On p-type SiC (12), Os is 10^-4ohm-cm²Contact resistivity of the ohmic contact. Ohmic and rectifying contacts to the TiC film 30 on the SiC substrate 12 are formed by sequentially depositing the WC film 32 and the metal W film 34 on the TiC film 30. [ These contacts are stable to at least 1150C. The electrode 38 is connected directly to the upper contact via a protective bonding film 36 such as Pt or PtAu.